Part Number Overview

Manufacturer Part Number
SI2302DS,215
Description
MOSFET N-CH 20V 2.5A TO236AB
Detailed Description
N-Channel 20 V 2.5A (Tc) 830mW (Tc) Surface Mount SOT-23 (TO-236AB)
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
SI2302DS,215 Models
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23 (TO-236AB)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

NEXNXPSI2302DS,215
SI2302DS T/R-ND
SI2302DS,215-ND
568-5956-1
2156-SI2302DS215
954-SI2302DS215
568-5956-2
SI2302DS T/R
934056632215
568-5956-6

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. SI2302DS,215

Documents & Media

Datasheets
1(SI2302DS)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(SI2302DS)
EDA Models
1(SI2302DS,215 Models)

Quantity Price

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