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Part Number Overview
Manufacturer Part Number
FQPF7N80C
Description
MOSFET N-CH 800V 6.6A TO220F
Detailed Description
N-Channel 800 V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF7
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQPF7N80COS
2156-FQPF7N80C-OS
FQPF7N80C-ND
FAIFSCFQPF7N80C
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF7N80C
Documents & Media
Datasheets
1(FQPF7N80C Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Assembly/Test 17/Nov/2023)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Quantity Price
-
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