Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
250mA
Rds On (Max) @ Id, Vgs
2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
12pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
CST6D
Base Product Number
SSM6N37