SI3410DV-T1-E3

Part Number Overview

Manufacturer Part Number

SI3410DV-T1-E3

Description

MOSFET N-CH 30V 8A 6TSOP

Detailed Description

N-Channel 30 V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

Manufacturer

Vishay Siliconix

Standard LeadTime

Edacad Model

Standard Package

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Vishay Siliconix

Series

TrenchFET®

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1295 pF @ 15 V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 4.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

Base Product Number

SI3410

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

-

Documents & Media

Datasheets

1(SI3410DV)

PCN Assembly/Origin

1(New Solder Plating Site 18/Apr/2023)

HTML Datasheet

1(SI3410DV)

Quantity Price

-

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SI3410DV-T1-E3

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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