Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Rds On (Max) @ Id, Vgs
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
950pF @ 1000V
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP3
Base Product Number
APTMC60