Part Number Overview

Manufacturer Part Number
FQA10N80
Description
MOSFET N-CH 800V 9.8A TO3P
Detailed Description
N-Channel 800 V 9.8A (Tc) 240W (Tc) Through Hole TO-3P
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
163
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-FQA10N80-FS
FAIFSCFQA10N80

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA10N80

Documents & Media

Datasheets
1(FQA10N80)

Quantity Price

Quantity: 163
Unit Price: $1.85
Packaging: Tube
MinMultiplier: 163

Substitutes

-