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Part Number Overview
Manufacturer Part Number
TPCF8B01(TE85L,F,M
Description
MOSFET P-CH 20V 2.7A VS-8
Detailed Description
P-Channel 20 V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
TPCF8B01(TE85L,F,M Models
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIII
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
110mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
330mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
VS-8 (2.9x1.5)
Package / Case
8-SMD, Flat Lead
Base Product Number
TPCF8B01
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
TPCF8B01(TE85LFMDRK
TPCF8B01FDKR-ND
TPCF8B01(TE85L,F,M-ND
TPCF8B01FDKR
TPCF8B01(TE85LFMCT
TPCF8B01(TE85L,F)
TPCF8B01FTR
TPCF8B01(TE85LFMDRK-ND
TPCF8B01(TE85LFMDKR
TPCF8B01TE85LFM
TPCF8B01(TE85L,F,MINACTIVE
TPCF8B01(TE85LFMTR
TPCF8B01(TE85L,F)-ND
TPCF8B01FCT
TPCF8B01FTR-ND
TPCF8B01FCT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M
Documents & Media
Datasheets
()
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
HTML Datasheet
()
EDA Models
1(TPCF8B01(TE85L,F,M Models)
Product Drawings
()
Quantity Price
-
Substitutes
Part No. : TT8U2TCR
Manufacturer. : Rohm Semiconductor
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar