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Part Number Overview
Manufacturer Part Number
STP120N4F6
Description
MOSFET N-CH 40V 80A TO220AB
Detailed Description
N-Channel 40 V 80A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
39 Weeks
Edacad Model
STP120N4F6 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
DeepGATE™, STripFET™ VI
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-497-10962-5
497-10962-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP120N4F6
Documents & Media
Datasheets
1(STx120N4F6)
Other Related Documents
1(STP120N4F6 View All Specifications)
Product Training Modules
()
Featured Product
1(STripFET VI DeepGATE Series Power MOSFETs)
PCN Assembly/Origin
1(Mult Dev Assembly Site Chg 14/Feb/2020)
HTML Datasheet
1(STx120N4F6)
EDA Models
1(STP120N4F6 Models)
Quantity Price
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