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Part Number Overview
Manufacturer Part Number
FDB3860
Description
MOSFET N-CH 100V 6.4A/30A TO263
Detailed Description
N-Channel 100 V 6.4A (Ta), 30A (Tc) 3.1W (Ta), 71W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.4A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
37mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1740 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FDB386
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDB3860CT
FDB3860DKR
FDB3860TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDB3860
Documents & Media
Datasheets
1(FDB3860)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Multiple Devices 27/Feb/2012)
HTML Datasheet
1(FDB3860)
Quantity Price
-
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