IPP47N10SL26AKSA1

Part Number Overview

Manufacturer Part Number

IPP47N10SL26AKSA1

Description

MOSFET N-CH 100V 47A TO220-3

Detailed Description

N-Channel 100 V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

SIPMOS®

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

135 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Base Product Number

IPP47N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

SP000225707

INFINFIPP47N10SL26AKSA1

IPP47N10SL-26

2156-IPP47N10SL26AKSA1-IT

IPP47N10SL26

IPP47N10SL-26-ND

Documents & Media

Datasheets

1(IPx47N10SL-26)

Quantity Price

-

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914167 172-025-142R001 RT8282BHGSP MAX4995AAVB+T RNCF1206BKC15R0

IPP47N10SL26AKSA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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