Mfr
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
170mOhm @ 8A
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 35 V
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-276