Series
GigaMOS™, HiPerFET™, TrenchT2™
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
132A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
364 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
23800 pF @ 25 V
Power Dissipation (Max)
570W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
24-SMPD
Package / Case
24-PowerSMD, 21 Leads
Base Product Number
MMIX1F180