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Part Number Overview
Manufacturer Part Number
IPI020N06NAKSA1
Description
MOSFET N-CH 60V 29A/120A TO262
Detailed Description
N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IPI020N06NAKSA1 Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7800 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI02N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPI020N06NAKSA1
IPI020N06N-ND
2156-IPI020N06NAKSA1
SP000962132
IPI020N06N
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI020N06NAKSA1
Documents & Media
Datasheets
1(IPI020N06N)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPI020N06N)
EDA Models
1(IPI020N06NAKSA1 Models)
Simulation Models
1(MOSFET OptiMOS™ 60V N-Channel Spice Model)
Quantity Price
-
Substitutes
Part No. : IPI086N10N3GXKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 470
Unit Price. : $97.16000
Substitute Type. : Similar
Quantity Available. : 470
Unit Price. : $97.16000
Substitute Type. : Similar