Part Number Overview

Manufacturer Part Number
TK20C60W,S1VQ
Description
MOSFET N-CH 600V 20A I2PAK
Detailed Description
N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole I2PAK
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
TK20C60

Environmental & Export Classifications

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

TK20C60W,S1VQ(S
TK20C60WS1VQ

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK20C60W,S1VQ

Documents & Media

PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Oct/2018)

Quantity Price

-

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