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Part Number Overview
Manufacturer Part Number
IRF7811AVPBF
Description
MOSFET N-CH 30V 10.8A 8SO
Detailed Description
N-Channel 30 V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
95
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
14mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1801 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001572278
2156-IRF7811AVPBF-IT
62-0036PBF-ND
62-0036PBF
IFEIRFIRF7811AVPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7811AVPBF
Documents & Media
Datasheets
1(IRF7811AVPbF)
Other Related Documents
1(IR Part Numbering System)
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Simulation Models
1(IRF7811AVTRPBF Saber Model)
Quantity Price
-
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