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Part Number Overview
Manufacturer Part Number
BC847BW/MI115
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 200 mW Surface Mount SOT-323
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
BC847xW
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPBC847BW/MI115
2156-BC847BW/MI115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC847BW/MI115
Documents & Media
Datasheets
1(BC847CM,315 Datasheet)
Quantity Price
-
Substitutes
-