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Part Number Overview
Manufacturer Part Number
APT1002RBNG
Description
MOSFET N-CH 1000V 8A TO247AD
Detailed Description
N-Channel 1000 V 8A (Tc) 240W (Tc) Through Hole TO-247AD
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
POWER MOS IV®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT1002RBNG-ND
150-APT1002RBNG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT1002RBNG
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Legacy Prod EOL 1/Mar/2017)
Quantity Price
-
Substitutes
-