China
Spain
Rusia
Italy
GermanyIPI80N06S3L06XK
Part Number Overview
Manufacturer Part Number
IPI80N06S3L06XK
Description
MOSFET N-CH 55V 80A TO262-3
Detailed Description
N-Channel 55 V 80A (Tc) 136W (Tc) Through Hole PG-TO262-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
196 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
9417 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPI80N06S3L-06IN-ND
IPI80N06S3L-06IN
IPI80N06S3L-06
IPI80N06S3L-06-ND
IPI80N06S3L06X
SP000088002
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N06S3L06XK
Documents & Media
Datasheets
1(IPB(I,P)80N06S3L-06)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB(I,P)80N06S3L-06)
Quantity Price
-
Substitutes
-