Part Number Overview

Manufacturer Part Number
HUF75939S3ST
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 200 V 22A (Tc) 180W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
120
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-HUF75939S3ST
FAIFSCHUF75939S3ST

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75939S3ST

Documents & Media

Datasheets
1(HUF75939P3)

Quantity Price

Quantity: 120
Unit Price: $2.51
Packaging: Bulk
MinMultiplier: 120

Substitutes

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