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Part Number Overview
Manufacturer Part Number
PMPB40SNA115
Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
N-Channel 60 V 12.9A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
43mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
612 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN2020MD-6
Package / Case
6-UDFN Exposed Pad
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PMPB40SNA115
NEXNXPPMPB40SNA115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMPB40SNA115
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-