Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Base Product Number
EPC20