Part Number Overview

Manufacturer Part Number
IXFX170N20T
Description
MOSFET N-CH 200V 170A PLUS247-3
Detailed Description
N-Channel 200 V 170A (Tc) 1150W (Tc) Through Hole PLUS247™-3
Manufacturer
IXYS
Standard LeadTime
45 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
HiPerFET™, Trench
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
265 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
19600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX170

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX170N20T

Documents & Media

Datasheets
1(IXF(K,X)170N20T)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(GigaMOS™ Power MOSFETs)
HTML Datasheet
1(IXF(K,X)170N20T)

Quantity Price

Quantity: 300
Unit Price: $10.67547
Packaging: Tube
MinMultiplier: 300

Substitutes

Part No. : IRFP4668PBF
Manufacturer. : Infineon Technologies
Quantity Available. : 12,634
Unit Price. : $8.76000
Substitute Type. : Similar