IRFBG30

IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

Vishay Siliconix

IRFBG30 Models

1,000

Vishay Siliconix

-

Tube

Obsolete

N-Channel

MOSFET (Metal Oxide)

1000 V

3.1A (Tc)

10V

5Ohm @ 1.9A, 10V

4V @ 250µA

80 nC @ 10 V

±20V

980 pF @ 25 V

-

125W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFBG30

RoHS non-compliant

1 (Unlimited)

REACH Unaffected

EAR99

8541.29.0095

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBG30

1(Packaging Information)

1(SIL-018-2015-Rev-0 20/May/2015)

1(IRFBG30)

1(IRFBG30 Models)

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