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Part Number Overview
Manufacturer Part Number
FQA6N90C-F109
Description
MOSFET N-CH 900V 6A TO3PN
Detailed Description
N-Channel 900 V 6A (Tc) 198W (Tc) Through Hole TO-3PN
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQA6N90C-F109 Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
198W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA6
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQA6N90C_F109-ND
FQA6N90C_F109
ONSONSFQA6N90C-F109
2156-FQA6N90C-F109-OS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA6N90C-F109
Documents & Media
Datasheets
1(FQA6N90C_F109)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Assembly/Test 16/Nov/2023)
PCN Packaging
()
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
HTML Datasheet
1(FQA6N90C_F109)
EDA Models
1(FQA6N90C-F109 Models)
Quantity Price
-
Substitutes
Part No. : 2SK1341-E
Manufacturer. : Renesas Electronics Corporation
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar