Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs
145mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
990pF @ 20V
Operating Temperature
150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP