China
Spain
Rusia
Italy
GermanyIXFH80N10Q
Part Number Overview
Manufacturer Part Number
IXFH80N10Q
Description
MOSFET N-CH 100V 80A TO-247AD
Detailed Description
N-Channel 100 V 80A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD (IXFH)
Package / Case
TO-247-3
Base Product Number
IXFH80
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IXFH80N10
IXFH80N10Q-NDR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFH80N10Q
Documents & Media
Datasheets
1(IXF(H,T)80N10Q)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 22/Mar/2017)
HTML Datasheet
1(IXF(H,T)80N10Q)
Quantity Price
-
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