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Part Number Overview
Manufacturer Part Number
IPI320N203G
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 200 V 34A (Tc) 136W (Tc) Through Hole PG-TO262-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
161
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPI320N203G
IFEINFIPI320N203G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI320N203G
Documents & Media
Datasheets
1(IPI320N20N3GAKSA1 Datasheet)
Quantity Price
-
Substitutes
-