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Part Number Overview
Manufacturer Part Number
EPC2105ENGRT
Description
GANFET 2N-CH 80V 9.5A DIE
Detailed Description
Mosfet Array 80V 9.5A Surface Mount Die
Manufacturer
EPC
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
9.5A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 40V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC210
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
Other Names
917-EPC2105ENGRDKR
917-EPC2105ENGRTR
917-EPC2105ENGRCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/EPC EPC2105ENGRT
Documents & Media
Datasheets
1(EPC2105)
Product Training Modules
1(eGaN Integrated GaN Power)
Video File
()
Environmental Information
()
Featured Product
1(EPC - EPC9037/EPC9041 Development Boards)
Reference Design Library
1(EPC9041: 20A, 0 ~ 80V, Half Bridge)
HTML Datasheet
1(EPC2105)
Quantity Price
-
Substitutes
-