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Part Number Overview
Manufacturer Part Number
FCU2250N80Z
Description
MOSFET N-CH 800V 2.6A I-PAK
Detailed Description
N-Channel 800 V 2.6A (Tc) 39W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
385
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.25Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
585 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FCU2250N80Z
FAIFSCFCU2250N80Z
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCU2250N80Z
Documents & Media
Datasheets
1(FCU2250N80Z Datasheet)
Quantity Price
Quantity: 385
Unit Price: $0.78
Packaging: Bulk
MinMultiplier: 385
Packaging: Bulk
MinMultiplier: 385
Substitutes
-