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Part Number Overview
Manufacturer Part Number
IXFN90N170SK
Description
SICFET N-CH 1700V 90A SOT227B
Detailed Description
N-Channel 1700 V 90A (Tc) Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs
376 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
7340 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN90
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN90N170SK
Documents & Media
Datasheets
1(IXFN90N170SK)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
PCN Obsolescence/ EOL
1(IXFN90N170SK obs 06/Nov/2023)
Quantity Price
-
Substitutes
-