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Part Number Overview
Manufacturer Part Number
IRF7341PBF
Description
MOSFET 2N-CH 55V 4.7A 8SO
Detailed Description
Mosfet Array 55V 4.7A 2W Surface Mount 8-SO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
4.7A
Rds On (Max) @ Id, Vgs
50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF734
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001577408
2156-IRF7341PBF
IFEIRFIRF7341PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF7341PBF
Documents & Media
Datasheets
1(IRF7341PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IRF7341PbF)
Simulation Models
1(Infineon IRF7341-SM-v01_00- EN Saber File)
Quantity Price
-
Substitutes
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