Part Number Overview

Manufacturer Part Number
STP35NF10
Description
MOSFET N-CH 100V 40A TO220AB
Detailed Description
N-Channel 100 V 40A (Tc) 115W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STP35NF10 Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
STripFET™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP35N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-497-2645-5
497-2645-5-NDR
497-2645-5
1805-STP35NF10

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP35NF10

Documents & Media

Datasheets
1(ST(B,P)35NF10)
Other Related Documents
1(STP35NF10 View All Specifications)
Product Training Modules
()
PCN Obsolescence/ EOL
1(Mult Dev OBS 2/Apr/2020)
PCN Assembly/Origin
1(Mult Dev Assembly Chg 18/Oct/2019)
PCN Packaging
1(Box Label Chg 28/Jul/2016)
EDA Models
1(STP35NF10 Models)

Quantity Price

-

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