China
Spain
Rusia
Italy
Germany2SD734E-AA
Part Number Overview
Manufacturer Part Number
2SD734E-AA
Description
NPN EPITAXIAL PLANAR SILICON TRA
Detailed Description
Bipolar (BJT) Transistor NPN 20 V 700 mA 250MHz 600 mW Through Hole 3-NP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,025
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
700 mA
Voltage - Collector Emitter Breakdown (Max)
20 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 2V
Power - Max
600 mW
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
ONSONS2SD734E-AA
2156-2SD734E-AA
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD734E-AA
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1025
Unit Price: $0.29
Packaging: Bulk
MinMultiplier: 1025
Packaging: Bulk
MinMultiplier: 1025
Substitutes
-