Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual) Common Source
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
310pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
9-UFBGA, WLBGA
Supplier Device Package
U-WLB1515-9
Base Product Number
DMP2100