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Part Number Overview
Manufacturer Part Number
IRF610B
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 200 V 3.3A (Tc) 38W (Tc) Through Hole TO-220
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
888
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCIRF610B
2156-IRF610B
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRF610B
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 888
Unit Price: $0.34
Packaging: Bulk
MinMultiplier: 888
Packaging: Bulk
MinMultiplier: 888
Substitutes
-