Part Number Overview

Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 350MA TO92-3
Detailed Description
N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
2N7000 Models
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
STripFET™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Base Product Number
2N70

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

497-3110-NDR
497-3110

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics 2N7000

Documents & Media

Datasheets
1(2N700(0,2) Datasheet)
Video File
1(Motor Control in Electric Vehicles)
HTML Datasheet
1(2N700(0,2) Datasheet)
EDA Models
1(2N7000 Models)

Quantity Price

-

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