Mfr
                    
					Toshiba Semiconductor and Storage
					
                   
                    Technology
                    
					MOSFET (Metal Oxide)
					
                   
                    Drain to Source Voltage (Vdss)
                    
					600 V
					
                   
                    Current - Continuous Drain (Id) @ 25°C
                    
					9.7A (Ta)
					
                   
                    Drive Voltage (Max Rds On, Min Rds On)
                    
					10V
					
                   
                    Rds On (Max) @ Id, Vgs
                    
					380mOhm @ 4.9A, 10V
					
                   
                    Vgs(th) (Max) @ Id
                    
					3.7V @ 500µA
					
                   
                    Gate Charge (Qg) (Max) @ Vgs
                    
					20 nC @ 10 V
					
                   
                    Input Capacitance (Ciss) (Max) @ Vds
                    
					700 pF @ 300 V
					
                   
                    Power Dissipation (Max)
                    
					88.3W (Tc)
					
                   
                    Operating Temperature
                    
					150°C (TJ)
					
                   
                    Mounting Type
                    
					Surface Mount
					
                   
                    Supplier Device Package
                    
					4-DFN-EP (8x8)
					
                   
                    Package / Case
                    
					4-VSFN Exposed Pad
					
                   
                    Base Product Number
                    
					TK10V60