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Part Number Overview
Manufacturer Part Number
HAT1069C-EL-E
Description
MOSFET P-CH 12V 4A 6CMFPAK
Detailed Description
P-Channel 12 V 4A (Ta) 900mW (Ta) Surface Mount 6-CMFPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
52mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
6-CMFPAK
Package / Case
6-SMD, Flat Leads
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT1069C-EL-E
Documents & Media
Datasheets
1(HAT1069C)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
HTML Datasheet
1(HAT1069C)
Quantity Price
-
Substitutes
-