Part Number Overview

Manufacturer Part Number
IPAW70R950CEXKSA1
Description
MOSFET N-CH 700V 7.4A TO220-3-31
Detailed Description
N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO220-3-FP
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
450
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPAW70

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SP001619372
2156-IPAW70R950CEXKSA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPAW70R950CEXKSA1

Documents & Media

Datasheets
1(IPAW70R950CE)
HTML Datasheet
1(IPAW70R950CE)
Simulation Models
1(CoolMOS™ Power MOSFET 700V CE Spice Model)

Quantity Price

-

Substitutes

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