Part Number Overview

Manufacturer Part Number
TK13A65U(STA4,Q,M)
Description
MOSFET N-CH 650V 13A TO220SIS
Detailed Description
N-Channel 650 V 13A (Ta) 40W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
DTMOSII
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK13A65

Environmental & Export Classifications

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

TK13A65USTA4QM
TK13A65U(STA4QM)

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)

Documents & Media

Datasheets
1(Mosfets Prod Guide)
Featured Product
1(Server Solutions)
HTML Datasheet
1(Mosfets Prod Guide)
Product Drawings
()

Quantity Price

-

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