Mfr
Toshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 µA @ 650 V
Capacitance @ Vr, F
16pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS4A65