Part Number Overview

Manufacturer Part Number
IRF200S234
Description
MOSFET N-CH 200V 90A D2PAK
Detailed Description
N-Channel 200 V 90A (Tc) 417W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRF200S234 Models
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.9mOhm @ 51A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6484 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF200

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IRF200S234DKR
SP001593688
IRF200S234TR
IRF200S234CT
IRF200S234-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF200S234

Documents & Media

Datasheets
1(IRF200S234)
Other Related Documents
1(IR Part Numbering System)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRF200S234)
EDA Models
1(IRF200S234 Models)
Simulation Models
1(Infineon IRF200S234-SM-v01_00- EN Saber File)

Quantity Price

-

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