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Part Number Overview
Manufacturer Part Number
TK14N65W,S1F
Description
MOSFET N-CH 650V 13.7A TO247
Detailed Description
N-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-247
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
52 Weeks
Edacad Model
TK14N65W,S1F Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK14N65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK14N65WS1F
TK14N65W,S1F(S
TK14N65W,S1F-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK14N65W,S1F
Documents & Media
Datasheets
1(TK14N65W)
Featured Product
1(Server Solutions)
EDA Models
1(TK14N65W,S1F Models)
Quantity Price
Quantity: 5000
Unit Price: $1.52
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MinMultiplier: 1
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