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Part Number Overview
Manufacturer Part Number
BSS119E6327
Description
MOSFET N-CH 100V 170MA SOT23-3
Detailed Description
N-Channel 100 V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
78 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23
Package / Case
TO-236-3, SC-59, SOT-23-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
BSS119
BSS119XTINTR
BSS119INCT-NDR
BSS119INTR-NDR
BSS119E6327XT
BSS119XTINTR-ND
BSS119INCT
SP000011161
BSS119XTINCT-ND
BSS119XTINCT
BSS119INTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS119E6327
Documents & Media
Datasheets
1(BSS119)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSS119)
Quantity Price
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