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Part Number Overview
Manufacturer Part Number
IRF840PBF
Description
MOSFET N-CH 500V 8A TO220AB
Detailed Description
N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRF840PBF Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IRF840PBF
SP001565770
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF840PBF
Documents & Media
EDA Models
1(IRF840PBF Models)
Quantity Price
-
Substitutes
Part No. : IRF840PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 3,877
Unit Price. : $1.86000
Substitute Type. : Parametric Equivalent
Quantity Available. : 3,877
Unit Price. : $1.86000
Substitute Type. : Parametric Equivalent
Part No. : IRF840PBF-BE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 3,369
Unit Price. : $1.86000
Substitute Type. : Parametric Equivalent
Quantity Available. : 3,369
Unit Price. : $1.86000
Substitute Type. : Parametric Equivalent