Part Number Overview

Manufacturer Part Number
IRFS4115PBF
Description
MOSFET N-CH 150V 195A D2PAK
Detailed Description
N-Channel 150 V 195A (Tc) 375W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.1mOhm @ 62A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

64-2135PBF
64-2135PBF-ND
SP001565010

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFS4115PBF

Documents & Media

Datasheets
1(IRFS(L)4115PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
HTML Datasheet
1(IRFS(L)4115PBF)
Simulation Models
1(IRFS4115PBF Saber Model)

Quantity Price

-

Substitutes

Part No. : IPB50N10S3L16ATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $2.32000
Substitute Type. : Similar
Part No. : FDB2532
Manufacturer. : onsemi
Quantity Available. : 3,876
Unit Price. : $4.23000
Substitute Type. : Similar