Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
22mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.7V @ 4.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
249 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
5280 pF @ 1000 V
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-227
Base Product Number
MSC017