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Part Number Overview
Manufacturer Part Number
2SD1111
Description
NPN DARLINGTON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 50 V 700 mA 200MHz 600 mW Through Hole 3-NP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
683
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
700 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 50mA, 2V
Power - Max
600 mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SD1111
ONSONS2SD1111
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1111
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 683
Unit Price: $0.44
Packaging: Bulk
MinMultiplier: 683
Packaging: Bulk
MinMultiplier: 683
Substitutes
-