China
Spain
Rusia
Italy
Germany2SD613E
Part Number Overview
Manufacturer Part Number
2SD613E
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 85 V 6 A 15MHz 40 W Through Hole TO-220AB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
485
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
85 V
Vce Saturation (Max) @ Ib, Ic
2V @ 400mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 5V
Power - Max
40 W
Frequency - Transition
15MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SD613E
ONSONS2SD613E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD613E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 485
Unit Price: $0.62
Packaging: Bulk
MinMultiplier: 485
Packaging: Bulk
MinMultiplier: 485
Substitutes
-