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Part Number Overview
Manufacturer Part Number
IXFN24N100F
Description
MOSFET N-CH 1000V 24A SOT227B
Detailed Description
N-Channel 1000 V 24A (Tc) 600W (Tc) Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerRF™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN24
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN24N100F
Documents & Media
Datasheets
1(IXFN24N100F)
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Jan/2019)
HTML Datasheet
1(IXFN24N100F)
Quantity Price
-
Substitutes
-